| PART |
Description |
Maker |
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| K4M51163PC-X |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4S511633F-YPC K4S511633F K4S511633F-F1H K4S511633 |
8M x 16Bit x 4 Banks Mobile SDRAM 8米16 × 4银行移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M56 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M28163PH-RBC K4M28163PH-RBE K4M28163PH-RBF1L K4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4M511633E-Y K4M511633E K4M511633E-C K4M511633E-F1 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM
1M x 4 BANKS x 16 BITS SDRAM
From old datasheet system
BGA SDRAM
|
WINBOND[Winbond]
Winbond Electronics
|
